Two-Dimensional Growth of AlN and GaN on Lattice-Relaxed Al0.4Ga0.6N Buffer Layers Prepared with High-Temperature-Grown AlN Buffer on Sapphire Substrates and Fabrication of Multiple-Quantum-Well Structures-Reference-Cited by-同舟云学术

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Two-Dimensional Growth of AlN and GaN on Lattice-Relaxed Al0.4Ga0.6N Buffer Layers Prepared with High-Temperature-Grown AlN Buffer on Sapphire Substrates and Fabrication of Multiple-Quantum-Well Structures

Published:2001-12-01 Issue:Part 2, No. 12A Volume:40 Page:L1293-L1296
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ohba Yasuo,Sato Rie,Kaneko Kei

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. AlN and AlGaN by MOVPE for UV Light Emitting Devices;Materials Science Forum;2008-08

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5. Ultraviolet light-emitting diodes based on group three nitrides;Nature Photonics;2008-02

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