Abstract
The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference82 articles.
1. S. A. Inada, H. Amano, I. Akasaki, A. Morita and K. Kobayashi, Meijo Daigaku Sogo Kenkyusho Sogo Gakujutsu Kenkyu Ronbunshu Vol. 5 (2006), p.73 (in Japanese).
2. H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda: Appl. Phys. Lett. Vol. 48 (1986), 353.
3. Y. Taniyasu, M. Kasu, T. Makimoto, Nature Vol. 441 (2006), p.325.
4. S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, Takahiro, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, T. Sota, Nature Materials Vol. 5 (2006).
5. H. Amano, A. Miyazaki, K. Iida, T. Kawashima, M. Iwaya, S. Kamiyama, I. Akasaki, R. Liu, A. Bell and F. A. Ponce, Phys. Stat. Sol., (a) Vol. 201 (2004), p.2679.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献