Ordering and Electronic Properties of Self-Assembled Si/Ge Quantum Dots-Reference-Cited by-同舟云学术

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Ordering and Electronic Properties of Self-Assembled Si/Ge Quantum Dots

Published:2001-03-30 Issue:Part 1, No. 3B Volume:40 Page:1860-1865
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Brunner Karl,Abstreiter Gerhard

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Towards a Controlled Growth of Self-assembled Nanostructures: Shaping, Ordering, and Localization in Ge/Si Heteroepitaxy;Self-Assembly of Nanostructures;2011-09-20

2. Strain effect in determining the geometric shape of self-assembled quantum dot;Journal of Physics D: Applied Physics;2009-06-04

3. Strain-induced Stranski–Krastanov three-dimensional growth mode of GaSb quantum dot on GaAs substrate;Applied Physics Letters;2009-05-04

4. Kinetic Monte Carlo study of metal organic chemical vapor deposition growth mechanism of GaSb quantum dots;Applied Physics Letters;2008-09-08

5. Photoluminescence thermal quenching in three-dimensional multilayer Si∕SiGe nanostructures;Applied Physics Letters;2008-01-21

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