Strain-induced Stranski–Krastanov three-dimensional growth mode of GaSb quantum dot on GaAs substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3132054
Reference23 articles.
1. Formation and optical properties of GaSb quantum dots epitaxially grown on Si substrates using an ultrathin SiO2 film technique
2. Growth of InGaSb Quantum Dot Structures on GaAs and Silicon Substrates
3. Quantum ring formation and antimony segregation in GaSb∕GaAs nanostructures
4. 450 meV hole localization in GaSb/GaAs quantum dots
5. A write time of 6ns for quantum dot–based memory structures
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