Intrinsic Gettering in Nitrogen-Doped and Hydrogen-Annealed Czochralski-Grown Silicon Wafers-Reference-Cited by-同舟云学术

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Intrinsic Gettering in Nitrogen-Doped and Hydrogen-Annealed Czochralski-Grown Silicon Wafers

Published:2001-06-15 Issue:Part 1, No. 6A Volume:40 Page:3944-3946
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Goto Hiroyuki,Pan Lian-Sheng,Tanaka Masafumi,Kashima Kazuhiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of pressure and temperature on bulk micro defect and denuded zone in nitrogen ambient furnace;Journal of the Korean Crystal Growth and Crystal Technology;2016-06-30

2. Effects of High Temperature Rapid Thermal Processing on the Formation of Oxidation Induced Stacking Faults in 300 mm Nitrogen-Doped Czochralski Silicon Wafers;ECS Transactions;2012-03-16

3. Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits;Journal of Crystal Growth;2009-01

4. Nitrogen-doped Czochralski silicon treated in rapid thermal process;Materials Science and Engineering: B;2006-10

5. Crystal growth and oxygen precipitation behavior of 300mm nitrogen-doped Czochralski silicon;Journal of Crystal Growth;2006-07

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