The Property of Ta2O5on Chemical Vapor Deposited Ru Film Fabricated using Tris(2,4-octanedionato)ruthenium for Application to Dynamic Random Access Memory Capacitor-Reference-Cited by-同舟云学术

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The Property of Ta2O5on Chemical Vapor Deposited Ru Film Fabricated using Tris(2,4-octanedionato)ruthenium for Application to Dynamic Random Access Memory Capacitor

Published:2001-09-15 Issue:Part 1, No. 9A Volume:40 Page:5201-5205
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Joo Wan,Kim Kyong-Min,Song Han-Sang,Jeong Kyung-Cheol,Lee Jong Min,Roh Jae Sung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-11

2. Ruthenium Polishing Using Potassium Periodate as the Oxidizer and Silica Abrasives;Journal of The Electrochemical Society;2011

3. Novel Ruthenium(II) Precursor for Metal–Organic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2008-08-08

4. Improved Nucleation Behavior of Ru Thin Films Prepared by MOCVD on TiCl[sub 4] Pretreated Substrates;Electrochemical and Solid-State Letters;2007

5. Reactive Deposition of Conformal Ruthenium Films from Supercritical Carbon Dioxide;Chemistry of Materials;2006-10-27

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