Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors-Reference-Cited by-同舟云学术

Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors

Published:2017-11 Issue:6 Volume:35 Page:061503
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Sawada Tomomi,Nabatame Toshihide,Dao Thang Duy,Yamamoto Ippei,Kurishima Kazunori,Onaya Takashi,Ohi Akihiko,Ito Kazuhiro,Takahashi Makoto,Kohama Kazuyuki,Ohishi Tomoji,Ogura Atsushi,Nagao Tadaaki

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4998425

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of Atomic layer-deposited Monoclinic Molybdenum Dioxide Films Stabilized by Tin Oxide Doping for DRAM Capacitor Electrode Applications;ACS Applied Materials & Interfaces;2024-04-25

2. Implementation of rutile-TiO2 thin films on TiN without post-annealing through introduction of SnO2 and its improved electrical properties;Surfaces and Interfaces;2023-11

3. Implementation of Rutile-Tio2 Thin Films on Tin Without Post-Annealing Through Introduction of Sno2 and its Improved Electrical Properties;2023

4. Engineering of atomic layer deposition process for titanium-aluminum-oxide based resistively switching medium;Materials Science and Engineering: B;2022-08

5. Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1−xO2 thin films using synchrotron x-ray analysis;APL Materials;2021-03-01