Effects of p-Electrode Reflectivity on Extraction Efficiency of Nitride-Based Light-Emitting Diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/1/i=5/a=052001/pdf
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3. High-Reflectance and Thermally Stable AgCu Alloy p-Type Reflectors for GaN-Based Light-Emitting Diodes
4. Simulation and fabrication of highly efficient InGaN‐based LEDs with corrugated interface substrate
5. Ohmic and degradation mechanisms of Ag contacts on p-type GaN
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