High-efficiency GaN-based light-emitting diodes fabricated with identical Ag contact formed on both n- and p-layers
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference16 articles.
1. Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact
2. Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag
3. Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes
4. GaInN light-emitting diodes with RuO2/SiO2/Ag omni-directional reflector
5. Low-resistance and high-reflectance Ni∕Ag∕Ru∕Ni∕Au ohmic contact on p-type GaN
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