Effects of Surface Oxidation of AlGaN on DC Characteristics of AlGaN/GaN High-Electron-Mobility Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference20 articles.
1. Highly Reliable 250 W GaN High Electron Mobility Transistor Power Amplifier
2. 30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz
3. High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
4. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
5. Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures
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