Author:
Koyanagi Tomotsune,Tachi Kiichi,Okamoto Kouichi,Kakushima Kuniyuki,Ahmet Parhat,Tsutsui Kazuo,Sugii Nobuyuki,Hattori Takeo,Iwai Hiroshi
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
12 articles.
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1. La2O3gate insulators prepared by atomic layer deposition: Optimal growth conditions and MgO/La2O3stacks for improved metal-oxide-semiconductor characteristics;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-09
2. Magnesium metallic interlayer as an oxygen-diffusion-barrier between high-κ dielectric thin films and silicon substrate;Thin Solid Films;2012-06
3. Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-11
4. High K / Metal Gate of Short-Channel SOI NMOSFET Research;Advanced Materials Research;2011-11
5. Metallic oxygen barrier diffusion applied to high-κ deposition;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-01