Simulation of Two-Dimensional 50 nm Vertical Metal Oxide Semiconductor Field-Effect Transistor Incorporating a Dielectric Pocket
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference9 articles.
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1. Impact of Different Gate Dielectric Materials on Analog/RF Performance of Dielectric-Pocket Double Gate-All-Around (DP − DGAA) MOSFETs;Silicon;2022-01-27
2. An Analysis of Analog Performance for High-K Gate Stack Dielectric Pocket Double-Gate-All-Around (DP-DGAA) MOSFET;Lecture Notes in Electrical Engineering;2021-12-14
3. Investigating linearity and effect of temperature variation on analog/RF performance of dielectric pocket high-k double gate-all-around (DP-DGAA) MOSFETs;Applied Physics A;2020-08-28
4. Impact of Temperature on Analog/RF Performance of Dielectric Pocket Gate-all-around (DPGAA) MOSFETs;Silicon;2020-07-30
5. SOI Schottky Barrier Nanowire MOSFET with Reduced Ambipolarity and Enhanced Electrostatic Integrity;Journal of Electronic Materials;2020-05-13
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