1.5 µm GaInAs/AlGaInAs Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes Grown by Organometallic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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1.5 µm GaInAs/AlGaInAs Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes Grown by Organometallic Chemical Vapor Deposition

Published:1992-05-15 Issue:Part 1, No. 5A Volume:31 Page:1365-1371
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kasukawa Akihiko,Bhat Rajaram,Caneau Catherine,Andreadakis Nicholas C.,Pathak Bhadresh,Zah Chung-En,Koza Mark. A.,Lee Tien-Pei

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical comparison of 0.78% tensile strained InGaAs/InAlGaAs and InGaAs/InGaAsP quantum well lasers emitting at 1.55 μm;SPIE Proceedings;1999-11-12

2. Passive temperature compensation of uncooled GaInAsP-InP diode lasers using thermal stress;IEEE Journal of Selected Topics in Quantum Electronics;1997-04

3. Impurity-induced disordering of AIGalnAs quantum wells by low temperature Zn diffusion;Journal of Electronic Materials;1996-05

4. Theoretical comparison of GaInAs/GaAlInAs and GaInAs/GaInAsP quantum‐well lasers;Journal of Applied Physics;1995-09-15

5. Zn-Diffusion-Induced Disordering of InGaAs/AlGaInAs Multiple Quantum Well and Its Application to Long-Wavelength Laser;Japanese Journal of Applied Physics;1994-10-15

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