Theoretical comparison of GaInAs/GaAlInAs and GaInAs/GaInAsP quantum‐well lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359911
Reference19 articles.
1. 1.5 µm GaInAs/AlGaInAs Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes Grown by Organometallic Chemical Vapor Deposition
2. Measurement of nonradiative Auger and radiative recombination rates in strained‐layer quantum‐well systems
3. Advanced1.55 µmQuantum-Well GaInAlAs Laser Diodes with Enhanced Performance
4. Newk⋅ptheory for GaAs/Ga1−xA1xAs-type quantum wells
5. Band mixing effects on quantum well gain
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1. Efficiency of GaInAs/GaAs quantum-well lasers upon inhomogeneous excitation of quantum wells;Quantum Electronics;2013-11-30
2. Production of broadband modal gain spectra in asymmetric multiple quantum-well Ga0.47In0.53As/Ga0.18In0.82As0.4P0.6heterostructures;Quantum Electronics;2008-11-30
3. Wide modal gain spectra in the asymmetric multiple-quantum-well heterostructures Ga0.47In0.53As-Ga0.18In0.82As0.4P0.6;2008 9th International Conference on Laser and Fiber-Optical Networks Modeling;2008-10
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