Band-Edge Luminescence of Strained SixGe1-x/Si Single Quantum Well Structures Grown on Si(111) by Si Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Band-Edge Luminescence of Strained SixGe1-x/Si Single Quantum Well Structures Grown on Si(111) by Si Molecular Beam Epitaxy

Published:1992-08-01 Issue:Part 2, No. 8A Volume:31 Page:L1018-L1020
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fukatsu Susumu,Usami Noritaka,Shiraki Yasuhiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Impact on SiGe Light Emission;Frontiers in Materials;2016-03-07

2. Luminescence investigation on strained Si1−xGex/Si modulated quantum wells;Solid-State Electronics;1994-04

3. Quantum well luminescence in epitaxial Si1-xGex/Si strained layers;Superconductors, Surfaces and Superlattices;1994

4. New low pressure chemical vapor deposition technique for Ge crystalline thin films;Applied Physics Letters;1993-11

5. Luminescence from Si1−xGex/Si quantum wells grown by Si molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-05

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