Luminescence investigation on strained Si1−xGex/Si modulated quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference45 articles.
1. Photoluminescence and excitation spectroscopy in coupled GaAs-Ga(Al)As quantum wells
2. Photoinduced Space-Charge Buildup by Asymmetric Electron and Hole Tunneling in Coupled Quantum Wells
3. Tunneling-controlled photoluminescence in nonresonantly coupled single quantum wells
4. Direct Observation of Superlattice Formation in a Semiconductor Heterostructure
5. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells
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1. Formation of SiGe Heterostructures and Their Properties;Springer Handbook of Crystal Growth;2010
2. Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition;Nanoscale Research Letters;2007-02-27
3. Fabrication technology of SiGe hetero-structures and their properties;Surface Science Reports;2005-11
4. Fabrication of Silicon/Germanium superlattice by ion-beam sputtering;Vacuum;2002-08
5. Enhancement of photoluminescence by microdisk formation from Si/Ge/Si single quantum wells;Applied Physics Letters;2002-04-08
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