Improving the Uniformity of Poly-Si Films Using a New Excimer Laser Annealing Method for Giant-Microelectronics-Reference-Cited by-同舟云学术

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Improving the Uniformity of Poly-Si Films Using a New Excimer Laser Annealing Method for Giant-Microelectronics

Published:1992-12-30 Issue:Part 1, No. 12B Volume:31 Page:4550-4554
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kuriyama Hiroyuki,Kuwahara Takashi,Ishida Satoshi,Nohda Tomoyuki,Sano Keiichi,Iwata Hiroshi,Noguchi Shigeru,Kiyama Seiichi,Tsuda Shinya,Nakano Shoichi,Osumi Masato,Kuwano Yukinori

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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