Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors-Reference-Cited by-同舟云学术

Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors

Published:2022-09 Issue:9 Volume:69 Page:4924-4929
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhu Hui¹^ORCID,Fang Zhixuan¹,Xie Na¹,Huang Zeng¹,Liu Zheng²,Li Dong¹,Feng Shiwei¹^ORCID,Guo Chunsheng¹^ORCID,Zhang Yamin¹^ORCID,Zhou Lixing¹^ORCID,Liu Bo¹

Affiliation:

1. Faculty of Information Technology, School of Microelectronics, Beijing University of Technology, Beijing, China

2. BOE Technology Group Company Ltd, Beijing, China

Funder

Beijing Natural Science Foundation of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9864631/09849484.pdf?arnumber=9849484

Reference28 articles.

1. A Novel Structure to Reduce Degradation Under Mechanical Bending in Foldable Low Temperature Polysilicon TFTs Fabricated on Polyimide

2. Biaxial Stretchability and Transparency of Ag Nanowire 2D Mass-Spring Networks Prepared by Floating Compression

3. Microdome-Induced Strain Localization for Biaxial Strain Decoupling toward Stretchable and Wearable Human Motion Detection

4. Effect of Uniaxial Tensile Strains at Different Orientations on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors

5. Design and development of ring-on-ring jig for biaxial strength testing of brittle ceramic composite materials: ZrB2-30wt-%SiB6

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