Easily Manufacturable Shallow Trench Isolation for Gigabit Dynamic Random Access Memory-Reference-Cited by-同舟云学术

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Easily Manufacturable Shallow Trench Isolation for Gigabit Dynamic Random Access Memory

Published:1996-09-15 Issue:Part 1, No. 9A Volume:35 Page:4618-4623
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Roh Byung Hyug,Cho Yun Hee,Shin Yu Gyun,Hong Chang Gi,Gwun Sang Dong,Lee Kang Yun,Kang Ho Gyu,Kim Ki Nam,Park Jong Woo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Effect of Alkaline pH on Polishing and Etching of Single and Polycrystalline Silicon;Japanese Journal of Applied Physics;2012-07-01

3. Effect of Alkaline pH on Polishing and Etching of Single and Polycrystalline Silicon;Japanese Journal of Applied Physics;2012-06-20

4. Effect of Liner Oxide Densification on Stress-Induced Leakage Current Characteristics in Shallow Trench Isolation Processing;Journal of The Electrochemical Society;2003

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