Biexciton Luminescence from GaN Epitaxial Layers-Reference-Cited by-同舟云学术

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Biexciton Luminescence from GaN Epitaxial Layers

Published:1996-06-15 Issue:Part 2, No. 6B Volume:35 Page:L787-L789
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Okada Kiyohiko,Yamada Yoichi,Taguchi Tsunemasa,Sasaki Fumio,Kobayashi Shunsuke,Tani Toshiro,Nakamura Shuji,Shinomiya Gen-ichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Binding energy of localized biexcitons in AlGaN-based quantum wells;Applied Physics Express;2014-11-27

2. Photoluminescence due to Inelastic Biexciton Scattering from an Al$_{0.61}$Ga$_{0.39}$N Ternary Alloy Epitaxial Layer at Room Temperature;Applied Physics Express;2012-06-20

3. Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities;Physical Review B;2012-06-13

4. Ultraviolet biexcitonic emission from AlGaN ternary alloys;Electronics and Communications in Japan;2011-05-26

5. Bowing of biexciton binding in Al x Ga 1-x N ternary alloys;SPIE Proceedings;2011-02-10

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