Effects ofAl3Ta/TaNBilayered Diffusion Barriers in the Al/Si Contact Systems-Reference-Cited by-同舟云学术

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Effects ofAl3Ta/TaNBilayered Diffusion Barriers in the Al/Si Contact Systems

Published:1996-02-15 Issue:Part 1, No. 2A Volume:35 Page:699-703
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takeyama Mayumi,Noya Atsushi,Sasaki Katsutaka

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Room-temperature deposition of nitride barrier by radical-assisted surface reaction in LSI and/or 3D-LSI metallization;Japanese Journal of Applied Physics;2022-08-01

2. Al(111) orientation and thermal stability of the system using Al₃Nb thin film;Japanese Journal of Applied Physics;2022-05-01

3. Nanoferroelectric domains in ultrathin BaTiO3 films;Journal of Applied Physics;2003-11-15

4. Formation of Al3Ta by Ta ion implantation into aluminum using a metal vapor vacuum arc ion source;Materials Research Bulletin;2001-07

5. Characterization of Tantalum Nitride Thin Films Fabricated by Pulsed Nd:YAG Laser Deposition Method;Japanese Journal of Applied Physics;2001-04-15

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