Al(111) orientation and thermal stability of the system using Al3Nb thin film

Abstract

Abstract We propose the application of aluminide to improve the reliability of LSI metallization and the performance of newly formed devices on it. In this study, the Al3Nb film which is the reaction product at the Al/Nb interface, is effective to improve the thermal stability of Al metallization and to improve the Al (111) orientation. In fact, it has been achieved both the preferential Al(111) orientation and the suppression of the interfacial reaction and interdiffusion of Al and Al3Nb films compared to the case of using the Nb film.