Impurity-free Disordering of InGaAs/InGaAlAs Quantum Wells on InP by Dielectric Thin Cap Films and Characterization of Its In-plane Spatial Resolution-Reference-Cited by-同舟云学术

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Impurity-free Disordering of InGaAs/InGaAlAs Quantum Wells on InP by Dielectric Thin Cap Films and Characterization of Its In-plane Spatial Resolution

Published:1996-02-28 Issue:Part 1, No. 2B Volume:35 Page:1276-1279
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sudo Shinya,Onishi Hirofumi,Nakano Yoshiaki,Shimogaki Yukihiro,Tada Kunio,Mondry Mark J.,Coldren Larry A.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integrated Hybrid Silicon Transmitters;Journal of Lightwave Technology;2012-03

2. Enhanced control over selective-area intermixing of In0.15Ga0.85As/GaAs quantum dots through post-growth exposure to radio-frequency plasma;Thin Solid Films;2011-01

3. Cathodoluminescence study of inductively coupled plasma (ICP) etched InP waveguide structures: Influence of the ridge dimension and dielectric capping;Materials Science and Engineering: B;2008-02

4. Introduction of defects during the dry etching of InP photonic structures: a cathodo-luminescence study;Journal of Materials Science: Materials in Electronics;2008-01-20

5. Investigation of point defect generation in dry etched InP ridge waveguide structures;Applied Physics Letters;2007-05-28

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