Liquid Phase Epitaxial Growth ofn-GaAs oni-GaAs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/13/i=2/a=387/pdf
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High purity and chrome-doped GaAs buffer layers grown by liquid phase epitaxy for mesfet application;Journal of Electronic Materials;1981-07
2. Removal of the high‐resistivity layer at thenonn+liquid phase epitaxial GaAs layer‐substrate interface by controlledinsituetch‐back;Journal of Applied Physics;1980-12
3. Liquid Phase Epitaxial Growth of High Purity GaAs by Sliding Boat Method;Japanese Journal of Applied Physics;1978-07
4. Electrical Properties of GaAs-Films Grown by LPE on Oxygen-Implanted GaAs Substrates;Japanese Journal of Applied Physics;1977-10
5. Multiple-layer liquid phase epitaxy of GaAs by controlled supercooling of Ga solutions;Journal of Crystal Growth;1977-08
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