Hetero-Epitaxial Growth of Boron Monophosphide on Silicon Substrate Using B2H6-PH3-H2System-Reference-Cited by-同舟云学术

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Hetero-Epitaxial Growth of Boron Monophosphide on Silicon Substrate Using B2H6-PH3-H2System

Published:1974-03 Issue:3 Volume:13 Page:411-416
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takigawa Mitsuharu,Hirayama Makoto,Shohno Katsufusa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/13/i=3/a=411/pdf

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1. Electron–Hole Excitation Induced Softening in Boron Carbide-Based Superhard Materials;ACS Applied Materials & Interfaces;2022-05-24

2. Boron Phosphide Films by Reactive Sputtering: Searching for a P‐Type Transparent Conductor;Advanced Materials Interfaces;2022-02-27

3. Boron phosphide as a p -type transparent conductor: Optical absorption and transport through electron-phonon coupling;Physical Review Materials;2020-06-08

4. Characteristics of Ohmic Contacts to n-Type Boron Phosphide;Japanese Journal of Applied Physics;2013-03-01

5. SiC epitaxial growth on Si(001) substrates using a BP buffer layer;Journal of Crystal Growth;2005-09

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