Schottky Contacts on n-InP Surface Treated by Plasma-Induced Oxygen Radicals
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 43 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A comparative electrical transport study on Cu/n-type InP Schottky diode measured at 300 and 100 K;Current Applied Physics;2016-01
2. Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment;Semiconductor Science and Technology;2015-12-01
3. Electrical and structural properties of a stacked metal layer contact to n-InP;Applied Surface Science;2011-02
4. Influence of oxygen plasma on electrical and physical parameters of Au–oxide–n-InP structures;Journal of Applied Physics;2003-11-15
5. Current transport and the role of barrier inhomogeneities at the high barrier n-InP | poly(pyrrole) interface;Journal of Applied Physics;1999-12
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