Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
2 articles.
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1. New electron and hole traps in GaAsP alloy;International Journal of Electronics;1997-07
2. gallium arsenide phosphide (GaAs(1-x)P(x)), deep defect states;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.