gallium arsenide phosphide (GaAs(1-x)P(x)), deep defect states-Reference-Cited by-同舟云学术

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gallium arsenide phosphide (GaAs(1-x)P(x)), deep defect states

Published: Issue: Volume: Page:1-21
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Container-title:Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.
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Springer-Verlag

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http://link.springer.com/content/pdf/10.1007/10860305_180.pdf

Reference14 articles.

1. Yurova, E.S., Solov’eva, E.V., Kistova, E.M., D’yakonov, L.I., Iglitsyn, M.I., Kevorkov, M.N.: Sov. Phys. Semicond. (English Transl.) 6 (1972) 426.

2. Yurova, E.S., Rashevskaya, E.P., Ovsyannikova, N.V., Kevorkov, M.N.: Sov. Phys. Semicond. (English Transl.) 6 (1973) 1829.

3. Metz, S., Fritz, W.: Proc. 6th Int. Symp. GaAs and Related Compounds, I, Edinburgh (1976), London, England: The Institute of Physics, 1977, p. 66.

4. Kravchenko, A.F., Prints, V.Ya.: Sov. Phys. Semicond. (English Transl.) 12 (1978) 952.

5. Craven, R.A., Finn, D.: J. Appl. Phys. 50 (1979) 6334.

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