Formation of Polycrystalline SiC in ECR Plasma
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hard silicon carbonitride films obtained by RF-plasma-enhanced chemical vapour deposition using the single-source precursor bis(trimethylsilyl)carbodiimide;Journal of the European Ceramic Society;2006-01
2. Low-temperature growth of polycrystalline SiC by catalytic CVD from monomethylsilane;Microelectronic Engineering;2006-01
3. Structural and optical properties of four-hexagonal polytype nanocrystalline silicon carbide films deposited by plasma enhanced chemical vapor deposition technique;Thin Solid Films;2004-01
4. Preparation of amorphous Si1−xCx (0≤x≤1) films by alternate deposition of Si and C thin layers using a dual magnetron sputtering source;Surface and Coatings Technology;2002-01
5. A comparative study of Ar and H2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperature;Diamond and Related Materials;2001-11
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