Author:
Iguchi Hidehiko,Hirayama Yoshiro,Okamoto Hiroshi
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
8 articles.
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1. Optical properties of InxGa1−xP/InP grown at high fluence Ga+ implantation on InP using focused ion beam;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-02
2. Lateral spreading of focused ion‐beam‐induced damage;Journal of Applied Physics;1992-09
3. The Physics of Ion-Beam Lithography;The Physics of Submicron Lithography;1992
4. Maskless all-UHV process for III-V compound semiconductors;Critical Reviews in Solid State and Materials Sciences;1991-01
5. The effect of low-energy Ga ions on GaAs/AlGaAs heterostructures;Semiconductor Science and Technology;1990-05-01