Optical properties of InxGa1−xP/InP grown at high fluence Ga+ implantation on InP using focused ion beam-Reference-Cited by-同舟云学术

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Optical properties of InxGa1−xP/InP grown at high fluence Ga+ implantation on InP using focused ion beam

Published:2011-02 Issue:3 Volume:269 Page:324-327
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Fang Hsin-Chiao,Liu Chuan-Pu,Dhara Sandip

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference18 articles.

1. 188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs

2. InGaP/InP waveguides

3. (Ga,In)P: A standard alloy in the classification of phonon mode behavior

4. Formation of High Resistance Region in GaAs by Ga Focused-Ion-Beam Implantation

5. Lateral GaAs Photodetector Fabricated by Ga Focused-Jon-Beam Implantation

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-temperature damage formation in ion-implanted SiC and its correlation with primary energy deposition;Vacuum;2014-07

2. Low-temperature damage formation in ion implanted InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07

3. Effect of In implantation and annealing on the lattice disorder and nano-mechanical properties of GaN;Thin Solid Films;2013-03

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