Growth of ZnSe Films on InxGa1-xAs Substrate by Metalorganic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Growth of ZnSe Films on InxGa1-xAs Substrate by Metalorganic Vapor Phase Epitaxy

Published:1986-04-20 Issue:Part 2, No. 4 Volume:25 Page:L335-L337
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shibata Noriyoshi,Zembutsu Sakae,Miyashita Tadashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structure of stacking faults formed in pairs in a ZnSe epitaxial layer on a GaAs(001) buffer layer;Journal of Applied Physics;1995-06-15

2. Investigation of the Strains at ZnSe/GaAs Interfaces by Raman Scattering;Acta Physica Polonica A;1991-11

3. Optical Properties of ZnSe Epilayers and Films;physica status solidi (a);1990-07-16

4. Characterization of the ZnSe heteroepilayer on a GaAs/Si substrate;Journal of Applied Physics;1990-04-15

5. The effect of growth time and thickness on the electrical properties of ZnSe epilayers on GaAs substrates;Thin Solid Films;1989-12

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