Structure of stacking faults formed in pairs in a ZnSe epitaxial layer on a GaAs(001) buffer layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359152
Reference14 articles.
1. Molecular beam epitaxial growth of low‐resistivity ZnSe films
2. Growth of ZnSxSe1−x by MBE on (100)GaAs substrates: Effect of lattice-matching
3. Determination of the onset of plastic deformation in ZnSe layers grown on (100) GaAs by molecular‐beam epitaxy
4. Recent developments in the MOVPE of II–VI compounds
5. Coherent Growth of ZnSe on GaAs by MOCVD
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