Dissociative Ion Yields on Metal Surfaces Bombarded with Low-Energy Fluorocarbon Ions
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Highly-selective wettability on organic light-emitting-diodes patterns by sequential low-power plasmas;Journal of Applied Physics;2010-05-15
2. Highly Selective SiO2Etching in Low-Electron-Temperature Inductively Coupled Plasma;Japanese Journal of Applied Physics;2007-06-06
3. Effect of sidewall properties on the bottom microtrench during SiO[sub 2] etching in a CF[sub 4] plasma;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
4. Beam study of the Si and SiO2 etching processes by energetic fluorocarbon ions;Journal of Applied Physics;2004-05
5. Characteristics of secondary etching of SiO2 by ions reflected from a primary SiO2 target in a CHF3 plasma;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2003-03
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