Characteristics of secondary etching of SiO2 by ions reflected from a primary SiO2 target in a CHF3 plasma
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.1540982
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1. Multiscale modeling of plasma–surface interaction—General picture and a case study of Si and SiO2 etching by fluorocarbon-based plasmas;Applied Physics Reviews;2021-12
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3. Mechanism of Sidewall Necking and Bowing in the Plasma Etching of High Aspect-Ratio Contact Holes;Journal of The Electrochemical Society;2010
4. Microtrenching effect of SiC ICP etching in SF6/O2plasma;Journal of Semiconductors;2009-01
5. Effect of sidewall properties on the bottom microtrench during SiO[sub 2] etching in a CF[sub 4] plasma;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
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