Physical Properties of Bi4Ti3O12Films Grown on Si(100) Wafers-Reference-Cited by-同舟云学术

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Physical Properties of Bi4Ti3O12Films Grown on Si(100) Wafers

Published:1995-09-30 Issue:Part 1, No. 9B Volume:34 Page:5116-5119
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamaguchi Masaki,Nagatomo Takao,Omoto Osamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microscale materials design using focused proton-beam writing;Nanoscale Ferroelectric-Multiferroic Materials for Energy Harvesting Applications;2019

2. Structural and optical properties of Fe doped bismuth titanate thin film deposited by RF sputtering;Japanese Journal of Applied Physics;2016-01-05

3. The effect of Bi2O3 compensation during thermal treatment on the crystalline and electrical characteristics of bismuth titanate thin films;Ceramics International;2008-03

4. The Influence of Thin Film Thickness on the Characteristics of Bismuth Titanate Oxide;Key Engineering Materials;2007-04

5. Synthesis ofBaTiO3Thin Films Substituted with Hafnium and Zirconium by a Laser Ablation Method Using the Fourth-harmonic Wave of a YAG Laser;Japanese Journal of Applied Physics;1997-09-30

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