Affiliation:
1. National University of Kaohsiung
2. Fortune Institute of Technology
3. National Sun Yat-Sen University
4. Southern Taiwan University
Abstract
Bi4Ti3O12
thin films were deposited on Pt/Ti/Si(p-100) substrate by RF magnetron
sputtering at room temperature, and crystallized in a RTA furnace at temperature of 675°C for 10
minutes. SIMS analysis identifies that bismuth content in the Bi4Ti3O12 thin film reduced slightly
from the surface into a depth of approximately 200 nm. XRD patterns revealed (117) phase was
dominated regardless the film thickness, and the intensity of the other peaks increased with the
increase of film thickness. (200) peak became dominant when the thickness of films were greater than
680 nm. SEM observation showed that the grains were stripe plate-like, and the grain size increased
with the increase of film thickness. Dielectric constant increased with the increase of film thickness,
and kept around a certain value with the thickness ranging from 300 to 640 nm, then it rose again as
the film thickness above 680 nm. The leakage current and electrical breakdown also strongly
depended on the film thickness.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
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