SiNxPrepassivation of AlGaN/GaN High-Electron-Mobility Transistors Using Remote-Mode Plasma-Enhanced Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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SiNxPrepassivation of AlGaN/GaN High-Electron-Mobility Transistors Using Remote-Mode Plasma-Enhanced Chemical Vapor Deposition

Published:2010-04-20 Issue:4 Volume:49 Page:041002
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Her Jin-Cherl,Cho Hyun-Jun,Yoo Chan-Sei,Cha Ho-Young,Oh Jae-Eung,Seo Kwang-Seok

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

2. 30-W/mm GaN HEMTs by Field Plate Optimization

3. Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

4. Systematic study of thermal stability of AlGaN/GaN two-dimensional electron gas structure with SiN surface passivation

5. Thermal Stability of Electrical Properties in AlGaN/GaN Heterostructures

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Hot Carrier Degradation in 0.25-μm Schottky Gate AlGaN/GaN HEMTs;Journal of Electromagnetic Engineering and Science;2022-05-31

2. Performance Comparison of Au-Based and Au-Free AlGaN/GaN HEMT on Silicon;IEEE Transactions on Electron Devices;2022-03

3. On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer;Applied Physics Letters;2022-01-03

4. Performance improvement of Al0.3Ga0.7N/AlN/GaN HEMTs using Nitrogen pre-treated Si3N4 passivation;Microelectronic Engineering;2021-09

5. Au-free low-temperature ohmic contacts for AlGaN/AlN/GaN heterostructures;Journal of Vacuum Science & Technology B;2020-11

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