Structural and Optical Properties of Nonpolar AlN(11\bar20) Films Grown on ZnO(11\bar20) Substrates with a Room-Temperature GaN Buffer Layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference22 articles.
1. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
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4. Near-bandedge cathodoluminescence of an AlN homoepitaxial film
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1. Semipolar AlN on Si(100): Technology and properties;Microelectronic Engineering;2017-06
2. Nucleation and growth of (10͞11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy;Scientific Reports;2016-05-17
3. Charge transport in non-polar and semi-polar III-V nitride heterostructures;Semiconductor Science and Technology;2012-01-19
4. Defect reduction methods for III-nitride heteroepitaxial films grown along nonpolar and semipolar orientations;Semiconductor Science and Technology;2012-01-19
5. Charged basal stacking fault scattering in nitride semiconductors;Applied Physics Letters;2011-01-10
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