Topography Change Due to Multilayer Oxidation at SiO2/Si(111) Interfaces
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/42/i=4S/a=1903/pdf
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Edge effect in the oxidation of three-dimensional nano-structured silicon;Materials Science in Semiconductor Processing;2019-04
2. Atomic Level Thickness Uniformity and Reliability of Ultrathin Silicon Dioxide Films Thermally Grown on Crystalline Silicon;Journal of the Vacuum Society of Japan;2015
3. Oxidation characteristics of silicon exposed to O(1D2) and O(3P2) radicals and stress-relaxation oxidation model for O(1D2) radicals;Japanese Journal of Applied Physics;2014-02-04
4. Evaluation of Kink Generation Rate and Step Flow Velocity on Si(111) during Wet Etching;Japanese Journal of Applied Physics;2013-11-01
5. Theoretical prediction of universal curves for carrier transport in Si/SiO2(100) interfaces;Journal of Applied Physics;2013-08-07
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