Atomic Level Thickness Uniformity and Reliability of Ultrathin Silicon Dioxide Films Thermally Grown on Crystalline Silicon-Reference-Cited by-同舟云学术

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Atomic Level Thickness Uniformity and Reliability of Ultrathin Silicon Dioxide Films Thermally Grown on Crystalline Silicon

Published:2015 Issue:1 Volume:58 Page:27-34
ISSN:1882-2398
Container-title:Journal of the Vacuum Society of Japan
language:en
Short-container-title:J. Vac. Soc. Jpn.

Author:

YAMABE Kikuo¹,HASUNUMA Ryu¹

Affiliation:

1. Institute of Applied Physics, University of Tsukuba

Publisher

The Vacuum Society of Japan

Subject

Spectroscopy,Surfaces and Interfaces,Instrumentation,General Materials Science

Reference26 articles.

1. 1) D. L. Crook: Proc. Int. Reliability Phys. Symp., (1978) 1.

2. 2) E. S. Anolock and G. R. Nelson: Proc. Int. Reliability Phys. Symp., (1978) 8.

3. 3) K. Yamabe, K. Liao, H. Minemura and M. Murata: J. Electrochem. Soc., 148 (2001) F9-F11.

4. 4) K. Yamabe, K. Taniguchi and Y. Matsushita: 21st Ann. Proc. Int. Reliability Phys. Symp., (1983) 184.

5. 5) K. Yamabe, K. Taniguchi and Y. Matsushita: Proc. Symp. Defects in Silicon, Electrochem. Soc., (1983) 629.

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