Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi,La)4Ti3O12/ONO/Si Structures-Reference-Cited by-同舟云学术

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Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi,La)4Ti3O12/ONO/Si Structures

Published:2003-11-10 Issue:Part 1, No. 11 Volume:42 Page:6955-6959
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Nam-Yeal,Yoon Sung-Min,You In-Kyu,Ryu Sang-Ouk,Cho Seong-Mok,Shin Woong-Chul,Choi Kyu-Jung,Kim Kwi-Dong,Yu Byoung-Gon

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=11R/a=6955/pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel;Semiconductor Science and Technology;2011-02-14

2. Effect of ferroelectric switching time on fatigue behaviors of (117)- and (00l)-oriented (Bi,La)4Ti3O12 thin films;Thin Solid Films;2005-07

3. Studies on the Switching Characteristics of Sol-Gel Derived Ferroelectric (Bi,La)4Ti3O12 Thin Films on Pt/Ti/SiO2/Si Structures;Journal of the Korean Physical Society;2003-11-15

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