Dry Etching Characteristics of AlGaN/GaN Heterostructures Using Inductively Coupled H2/Cl2, Ar/Cl2and BCl3/Cl2Plasmas
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/42/i=3A/a=L257/pdf
Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of Inductively Coupled Plasma Etching Parameters on n-Al0.5Ga0.5N Ohmic Contact;IEEE Photonics Journal;2024-10
2. Aluminum nitride photonic integrated circuits: from piezo-optomechanics to nonlinear optics;Advances in Optics and Photonics;2023-03-29
3. Etch Mechanism of AlN Thin Film in Cl2/Ar Inductively Coupled Plasma;Transactions on Electrical and Electronic Materials;2022-08-04
4. GaN channel waveguide with vertically polarity inversion formed by surface activated bonding for wavelength conversion;Japanese Journal of Applied Physics;2022-05-01
5. High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching;Chinese Physics B;2022-01-01
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