High-Quality AlN by Initial Layer-by-Layer Growth on Surface-Controlled 4H-SiC(0001) Substrate-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

High-Quality AlN by Initial Layer-by-Layer Growth on Surface-Controlled 4H-SiC(0001) Substrate

Published:2003-05-01 Issue:Part 2, No. 5A Volume:42 Page:L445-L447
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Onojima Norio,Suda Jun,Matsunami Hiroyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=5A/a=L445/pdf

Cited by 57 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition;Materials Science in Semiconductor Processing;2024-05

2. Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC);Microelectronic Engineering;2024-01

3. High-quality AlN nucleation layer on SiC substrate grown by MOVPE: Growth, structural and optical characteristics;Materials Science and Engineering: B;2022-04

4. Total-reflection high-energy positron diffractometer at NEPOMUC — Instrumentation, simulation, and first measurements;Review of Scientific Instruments;2021-11-01

5. Growth of single crystalline Si on graphene using RF-MBE: Orientation control with an AlN interface layer;Applied Surface Science;2021-05

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP