Shape and Interband Transition Behavior of InAs Quantum Dots Dependent on Number of Stacking Cycles-Reference-Cited by-同舟云学术

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Shape and Interband Transition Behavior of InAs Quantum Dots Dependent on Number of Stacking Cycles

Published:2003-01-15 Issue:Part 1, No. 1 Volume:42 Page:54-57
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Kwang Moo,Park Young Ju,Roh Cheong Hyun,Park Young Min,Kim Eun Kyu,Hyon Chan Kyeong,Park Jung Ho,Kim Tae Whan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=1R/a=54/pdf

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic-Scale Multimodal Characterization of Self-Assembled InAs/InGaAlAs Quantum Dots;The Journal of Physical Chemistry Letters;2024-03-29

2. Influence of Three-Component Barrier Layers on Optical Properties of Photodetectors with Quantum Dots;Solid State Phenomena;2021-04

3. Atomic-Scale Characterization of Droplet Epitaxy Quantum Dots;Nanomaterials;2021-01-03

4. Modeling and analysis of functional characteristics of QD-InAs/GaAs heterointerface with multi-barrier layers;IOP Conference Series: Materials Science and Engineering;2021-01-01

5. Formation mechanisms of agglomerations in high-density InAs/GaAs quantum dot multi-layer structures;Applied Surface Science;2020-04

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