Abstract
Abstract
The article is devoted to the problem of studying the functional characteristics of heterointerfaces with quantum dots InAs by methods of mathematical and simulation modeling. A solution to the problem in the form of a developed mathematical model of a structure with quantum dots InAs with two types of barrier layers GaAs and AlGaAs is proposed. It is shown that using the quasi-drift-diffusion model in combination with the solution of the Schrödinger equation in the potential well of a quantum dot, it is possible to construct the energy structure of the layer-by-layer heterointerface design with the possibility of modeling functional characteristics, in particular, the spectral dependence of the external quantum efficiency and the dark current-voltage characteristic.
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