Effects of Growth Temperature and V/III Ratio on MOCVD-Grown GaAs-on-Si-Reference-Cited by-同舟云学术

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Effects of Growth Temperature and V/III Ratio on MOCVD-Grown GaAs-on-Si

Published:1990-01-20 Issue:Part 1, No. 1 Volume:29 Page:138-144
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nozaki Shinji,Noto Nobuhiko,Egawa Takashi,Wu Albert T.,Soga Tetsuo,Jimbo Takashi,Umeno Masayoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reduction of GaAs Buffer Thickness and Its Impact on Epitaxially Integrated III–V Quantum Dot Lasers on a Si Substrate;ACS Applied Materials & Interfaces;2024-06-03

2. Heteroepitaxial Growth of III-V Semiconductors on Silicon;Crystals;2020-12-21

3. Low Surface Roughness GaAs/Si Thin-Film Deposition Using Three-Step Growth Method in MBE;Materials Science Forum;2020-11

4. Influences of ultrathin amorphous buffer layers on GaAs/Si grown by metal–organic chemical vapor deposition;Applied Physics A;2018-03-12

5. Effect of low-V/III-ratio metalorganic vapor-phase epitaxy on GaAs solar cells;Japanese Journal of Applied Physics;2017-07-11

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