Electron Spin Resonance Study of Boron Doped a-SiNx:H (x=0.07)-Reference-Cited by-同舟云学术

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Electron Spin Resonance Study of Boron Doped a-SiNx:H (x=0.07)

Published:1985-07-20 Issue:Part 2, No. 7 Volume:24 Page:L522-L524
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nojima Hideo,Hayakawa Takashi,Narikawa Shiro,Ehara Shaw

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hybrid channel induced forming-free performance in nanocrystalline-Si:H/a-SiNx:H resistive switching memory;Nanotechnology;2019-06-17

2. Order-disorder-liquid transition of KNO3studied by raman scattering;Ferroelectrics;1995-08

3. Substitutional and interstitial doping of amorphous silicon nitride;Philosophical Magazine B;1988-04

4. Substitutional and Interstitial Doping of Amorphous Silicon Nitride;MRS Proceedings;1987

5. 30A-1 NaNO3 [F];Landolt-Börnstein - Group III Condensed Matter

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