Striations in Undoped Semi-Insulating LEC GaAs-Reference-Cited by-同舟云学术

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Striations in Undoped Semi-Insulating LEC GaAs

Published:1985-01-20 Issue:Part 2, No. 1 Volume:24 Page:L65-L68
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nakajima Masato,Katsumata Tohru,Terashima Kazutaka,Ishida Koichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polycrystallinity in Gallium Arsenide Crystals Grown by the Czochralski Method;Crystallography Reports;2021-11

2. Characterization and Control of Defects in VCz GaAs Crystals Grown without B2O3 Encapsulant;Crystal Growth Technology;2010-07-19

3. In-Vacuo thermal processing of α-Al2O3 single crystals in boron ambience and its implication on TL & OSL response;Journal of Luminescence;2010-07

4. Synthesis and characterisation of GaSb and GaInSb feed materials;Journal of Crystal Growth;2005-02

5. Investigations of structural defects by etching of GaSb grown by the liquid-encapsulated Czochralski technique;Materials Science and Engineering: B;1997-02

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