Investigations of structural defects by etching of GaSb grown by the liquid-encapsulated Czochralski technique
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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1. A preliminary study of dislocations in indium and gallium phosphides
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1. Chemical interaction of the GaAs, GaSb, InAs, and InSb single crystals surface with I2 + DMF (methanol) etchants;Applied Nanoscience;2023-05-17
2. On the Study of Dislocation Density in MBE GaSb-Based Structures;Crystals;2020-11-25
3. Study of In distribution on GaInSb:Al crystals by ion beam techniques;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-03
4. Structural Characterization of Doped GaSb Single Crystals by X-ray Topography;Journal of Electronic Materials;2010-03-23
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